Epoxy resin molding material for sealing

ABSTRACT

An encapsulating epoxy resin molding material comprising (A) an epoxy resin, (B) a curing agent, and (C) a silane coupling agent having a secondary amino group or (D) a phosphate, and semiconductor devices encapsulated therein.  
     The encapsulating epoxy resin molding material for thin semiconductor devices according to this invention is excellent in fluidity, and the semiconductor device encapsulated therein, which is a semiconductor device having a semiconductor chip arranged on a thin, multi-pin, long wire, narrow-pad-pitch, or on a mounted substrate such as organic substrate or organic film, is free of molding defects such as wire sweep, voids etc. as shown in the Examples, and thus its industrial value is significant.

TECHNICAL FIELD

[0001] This invention relates to an epoxy resin molding material forencapsulation and a semiconductor device encapsulated therein. Morespecifically, this invention relates to an epoxy resin molding materialfor encapsulation excellent in fluidity and suitable for a thinsemiconductor device having a semiconductor chip arranged on a thin,multi-pin, long wire, narrow pad pitch or mounted substrate to a thinsemiconductor device encapsulated therein with less generation ofmolding defects such as wire sweep and voids and having a semiconductorchip arranged on a thin, multi-pin, long wire, narrow pad pitch ormounted substrate.

RELATED ART

[0002] High-density mounting on printed wiring boards for electronicparts is advancing in recent years. To cope therewith, packages ofsurface mounting type have come to be mainly used for semiconductordevices in place of conventional packages of pin insertion type. Forincreasing the density of mounting to decrease the height of mounting,IC and LSI of surface mounting type are in the form of a thin and smallpackage where the ratio by volume of an element to the package isbecoming high and the thickness of the package is becoming very thin.The area of the chip and pin count are being increased withmultifunctionalization and higher capacity of the element and moreoveras, the number of pad (electrode) is increasing, a reduction in padpitch and a reduction in pad dimension, that is, narrowing of pad pitchis also advancing.

[0003] To cope with a further reduction in size and weight, the form ofthe package is being switched from QFP (Quad Flat Package) and SOP(Small Outline Package) and the like to CSP (Chip Size Package) and BGA(Ball Grid Array) coping more easily with a large pin count and capableof high-density mounting. New structures such as those of phase downtype, stacked type, flip chip type, wafer level type etc. have beendeveloped in recent years for these packages to effect higher speed andmultifunctionalization. Among these, the stacked type structure is astructure wherein a plurality of chips are piled up in a package andconnected by wire bonding so that a plurality of chips having differentfunctions can be mounted in one package, thus achievingmultifunctionalization.

[0004] In place of a conventional one-chip-one-cavity encapsulatingmethod used in the step of encapsulation with resin in producing CSP andBGA, a mold array package type encapsulating method of encapsulating aplurality of chips with one cavity has been developed to effect animprovement in production efficiency and a reduction in costs.

[0005] On one hand, the encapsulating material is required to solvere-flow resistance as a problem upon mounting a semiconductor device onthe surface of a printed circuit board and to sufficiently satisfytemperature cycling etc. required for reliability after mounting, andthe encapsulating material is endowed with low moisture absorptivity andlow expansibility by reduction in the resin viscosity and highercharging of fillers, in order to cope therewith.

DISCLOSURE OF INVENTION

[0006] However, the conventional encapsulating material often generatesmolding defects such as wire sweep and voids, thus making it difficultto produce thinner semiconductor devices, a larger area of chip, anincreased pin count, narrower pad pitch, etc. To cope therewith,improvements in the encapsulating material have been attempted byfurther reduction in the resin viscosity and a change in the compositionof fillers, but satisfactory results are still not obtained. A stricterfluidity characteristic is required for the encapsulating material foruse in stacked type CSP for long wire or in semiconductor devicesmoldable by mold array package type molding with a high cavity volume.

[0007] Accordingly, an encapsulating epoxy resin molding material forsemiconductor devices which is excellent in fluidity, as well as asemiconductor device encapsulated therein with less generation ofmolding defects such as wire sweep, voids etc. are required.

[0008] In one preferable embodiment, there is provided an epoxy resinmolding material for encapsulation suitable for encapsulating asemiconductor device having a semiconductor chip arranged on a thin,multi-pin, long wire, narrow pad pitch or on a mounted substrate such asorganic substrate or organic film.

[0009] In another preferable embodiment, there is provided asemiconductor device having a semiconductor chip arranged on a thin,multi-pin, long wire, narrow pad pitch or on a mounted substrate such asorganic substrate or organic film, which has been encapsulated in theencapsulating epoxy resin molding material of the invention.

[0010] To solve the problem described above, an extensive study was madeby the inventers, and as a result, it was found that the problemdescribed above can be solved by a particular encapsulating epoxy resinmolding material comprising a silane coupling agent having a secondaryamino group, or a phosphate, as an essential component and by asemiconductor device encapsulated therein.

[0011] That is, this invention relates to:

[0012] (1) An encapsulating epoxy resin molding material comprising (A)an epoxy resin, (B) a curing agent, and (C) a silane coupling agenthaving a secondary amino group or (D) a phosphate, wherein a disk flowis 80 mm or more.

[0013] (2) An encapsulating epoxy resin molding material comprising (A)an epoxy resin, (B) a curing agent, and (C) a silane coupling agenthaving a secondary amino group or (D) a phosphate, wherein theencapsulating epoxy resin molding material is used for the semiconductordevice having at least one of the following constitutions (a) to (f):

[0014] (a) at least one of an encapsulating material of an upper side ofa semiconductor chip and an encapsulating material of a lower side ofthe semiconductor chip has a thickness 0.7 mm or less;

[0015] (b) the pin count is 80 or more;

[0016] (c) the length of the wire is 2 mm or more;

[0017] (d) the pad pitch on the semiconductor chip is 90 μm or less;

[0018] (e) the thickness of a package, in which the semiconductor chipis disposed on a mounting substrate, is 2 mm or less.

[0019] (f) the area of the semiconductor chip is 25 mm² or more.

[0020] (3) The encapsulating epoxy resin molding material described inthe above-mentioned (2), wherein the disk flow is 80 mm or more.

[0021] (4) The encapsulating epoxy resin molding material described inany one of the above-mentioned (1) to (3), which further comprises (E)an inorganic filler.

[0022] (5) The encapsulating epoxy resin molding material described inany one of the above-mentioned (1) to (4), which further comprises (F) acuring accelerator.

[0023] (6) The encapsulating epoxy resin molding material described inany one of the above-mentioned (1) to (5), wherein the semiconductordevice is a stacked type package.

[0024] (7) The encapsulating epoxy resin molding material described inanyone of the above-mentioned (1) to (6), wherein the semiconductordevice is a mold array package.

[0025] (8) The encapsulating epoxy resin molding material described inanyone of the above-mentioned (1) to (7), wherein the melt viscosity ofthe epoxy resin (A) at 150° C. is 2 poises or less.

[0026] (9) The encapsulating epoxy resin molding material described inanyone of the above-mentioned (1) to (8), wherein the epoxy resin (A)comprises at least one member of:

[0027] a biphenyl type epoxy resin represented by the general formula(I):

[0028] wherein R¹ to R⁴may be the same or different and are selectedfrom a hydrogen atom and a C₁₋₁₀ substituted or unsubstituted monovalenthydrocarbon group, and n is an integer of 0 to 3,

[0029] a bisphenol F type epoxy resin represented by the general formula(II):

[0030] wherein R¹ to R⁸ may be the same or different and are selectedfrom a hydrogen atom, a C₁₋₁₀ alkyl group, a C₁₋₁₀ alkoxy group, a C₆₋₁₀aryl group, and a C₆₋₁₀ aralkyl group, and n is an integer of 0 to 3,and

[0031] a stilbene type epoxy resin represented by the general formula(III):

[0032] wherein R¹ to R⁸ may be the same or different and are selectedfrom a hydrogen atom, a C₁₋₁₀ alkyl group, a C₁₋₁₀ alkoxy group, a C₆₋₁₀aryl group and a C₆₋₁₀ aralkyl group, and n is an integer of 0 to 3.

[0033] (10) The encapsulating epoxy resin molding material described inany one of the above-mentioned (1) to (9), wherein the melt viscosity ofthe curing agent (B) at 150° C. is 2 poises or less.

[0034] (11) The encapsulating epoxy resin molding material described inany one of the above-mentioned (1) to (10), wherein the curing resin (B)comprises:

[0035] a phenol-aralkyl resin represented by the general formula (IV):

[0036] wherein R is selected from a hydrogen atom and a C₁₋₁₀substituted or unsubstituted monovalent hydrocarbon group, and n is aninteger of 0 to 10, and/or

[0037] a biphenyl type phenol resin represented by the general formula(V):

[0038] wherein R¹ to R⁹ may be the same or different and are selectedfrom a hydrogen atom, a C₁₋₁₀ alkyl group, a C₁₋₁₀ alkoxy group, a C₆₋₁₀aryl group and a C₆₋₁₀ aralkyl group, and n is an integer of 0 to 10.

[0039] (12) The encapsulating epoxy resin molding material described inany one of the above-mentioned (1) to (11), wherein the silane couplingagent having a secondary amino group (C) comprises a compoundrepresented by the general formula (VI):

[0040] wherein R¹ is selected from a hydrogen atom, a C₁₋₆ alkyl groupand a C₁₋₂ alkoxy group, R² is selected from a C₁₋₆ alkyl group and aphenyl group, R³ represents methyl or ethyl group, n is an integer of 1to 6, and m is an integer of 1 to 3.

[0041] (13) The encapsulating epoxy resin molding material described inany one of the above-mentioned (1) to (11), wherein the phosphate (D)comprises a compound represented by the general formula (X):

[0042] wherein eight R groups may be the same or different and representa C₁₋₄ alkyl group, and Ar represents an aromatic group.

[0043] (14) A semiconductor device encapsulated in the encapsulatingepoxy resin molding material described in any one of the above-mentioned(1) to (13).

[0044] (15) The semiconductor device described in the above-mentioned(14), having at least one of the following constitutions (a) to (f):

[0045] (a) at least one of an encapsulating material of an upper side ofa semiconductor chip and an encapsulating material of a lower side ofthe semiconductor chip has a thickness 0.7 mm or less;

[0046] (b) the pin count is 80 or more,

[0047] (c) the length of the wire is 2 mm or more,

[0048] (d) the pad pitch on the semiconductor chip is 90 μm or less,

[0049] (e) the thickness of a package, in which the semiconductor chipis disposed on a mounting substrate, is 2 mm or less;

[0050] (f) the area of the semiconductor chip is 25 mm² or more.

[0051] This application claims priority rights of Japanese PatentApplications previously filed by the same applicant, that is, JapanesePatent Application No. 2000-291067 (filing date: Sep. 25, 2000),Japanese Patent Application No. 2000-402358 (filing date: Dec. 28,2000), Japanese Patent Application No. 2000-402359 (filing date: Dec.28, 2000), Japanese Patent Application No. 2000-402360 (filing date:Dec. 28, 2000), Japanese Patent Application No. 2000-402361 (filingdate: Dec. 28, 2000), Japanese Patent Application No. 2000-402362(filing date: Dec. 28, 2000), Japanese Patent Application No.2000-402363 (filing date: Dec. 28, 2000) and Japanese Patent ApplicationNo. 2001-82741 (filing date: Mar. 22, 2001), and these specificationsare incorporated herein by reference.

BRIEF DESCRIPTION OF DRAWINGS

[0052]FIG. 1 shows (a) a sectional view, (b) an upper-surface (partiallysee-through) view and (c) an enlarged view of a region of bonding padsin a semiconductor device (QFP).

[0053]FIG. 2 is a drawing showing a method of measuring the wire sweep.

[0054]FIG. 3 shows (a) a sectional view, (b) an upper-surface (partiallysee-through) view and (c) an enlarged view of a region of bonding padsin a semiconductor device (BGA).

[0055]FIG. 4 is a drawing showing a method of measuring the deformationof a wire.

[0056]FIG. 5 is a drawing of a mold array package type BGA device.

DESCRIPTION OF SYMBOLS

[0057]1: Island (tab).

[0058]2: Die attach

[0059]3: Semiconductor chip.

[0060]4: Lead pin.

[0061]5: Wire.

[0062]6: Epoxy resin molding material for encapsulation (encapsulatingmaterial).

[0063]7: Terminal (bonding pad).

[0064]8: Insulating base substrate.

[0065]9: Solder ball.

[0066]10: Terminal on the wiring board.

DESCRIPTION OF THE PREFERRED EMBODIMENT

[0067] According to this invention, there is provided an encapsulatingepoxy resin molding material suitable for encapsulating a semiconductordevice having a semiconductor chip arranged on a thin, multi-pin, longwire, narrow pad pitch, or on a mounted substrate such as organicsubstrate or organic film

[0068] According to this invention, there is also provided asemiconductor device having a semiconductor chip arranged on a thin,multi-pin, long wire, narrow pad pitch, or on a mounted substrate suchas organic substrate or organic film, which is encapsulated by theencapsulating epoxy resin molding material of the invention.

[0069] Hereinafter, the respective components used in the encapsulatingepoxy resin molding material of the invention are described.

[0070] The epoxy resin (A) used in this invention is not particularlylimited insofar as it is generally used in encapsulating epoxy resinmolding materials, and examples thereof include phenol novolak typeepoxy resin and o-cresol novolak type epoxy resin, for example a resinobtained by epoxidation of a novolak resin obtained in the presence ofan acid catalyst by condensation of phenols such as phenol, cresol,xylenol, resorcin, catechol, bisphenol A, bisphenol F etc. and/ornaphthols such as α-naphthol, β-naphthol, dihydroxynaphthalene etc., orby co-condensation thereof with compounds containing an aldehyde group,such as formaldehyde, acetaldehyde, propionaldehyde, benzaldehyde,salicylaldehyde etc.; glycidyl ether (e.g. diglycidyl ether) type epoxyresin made from bisphenol A, bisphenol F, bisphenol S, or alkylsubstituted or unsubstituted biphenol; stilbene type epoxy resin; asulfur atom-containing epoxy resin; a hydroquinone type epoxy resin; aglycidyl ester type epoxy resin obtained by reacting a polybasic acidsuch as phthalic acid, dimeric acid etc. with epichlorohydrin; aglycidyl amine type epoxy resin obtained by reacting a polyamine such asdiaminodiphenyl methane, isocyanuric acid etc. with epichlorohydrin, anepoxidated product of a resin obtained by co-condensation ofdicyclopentadiene with phenols and/or naphthols; an epoxy resin having anaphthalene ring; an epoxidated product of an aralkyl type phenol resinsuch as phenol-aralkyl resin, naphthol-aralkyl resin etc.; a trimethylolpropane type epoxy resin; a terpene-modified epoxy resin; a linearaliphatic epoxy resin obtained by oxidizing olefin bonds with a peracidsuch as peracetic acid, and an aliphatic epoxy resin, and these may beused singly or in combination thereof.

[0071] Particularly from the viewpoint of flowability and re-flowingresistance, a biphenyl type epoxy resin represented by the followinggeneral formula (I) is preferable.

[0072] wherein R¹ to R⁴ are selected from a hydrogen atom and C-₁₋₁₀substituted or unsubstituted monovalent hydrocarbon groups, and all thegroups may be the same or different, and n is an integer of 0 to 3.

[0073] The biphenyl type epoxy resin represented by the general formula(I) includes, for example, an epoxy resin based on4,4′-bis(2,3-epoxypropoxy) biphenyl or4,4′-bis(2,3-epoxypropoxy)-3,3′,5,5′-tetramethyl biphenyl and an epoxyresin obtained by reacting epichlorohydrin with 4,4′-biphenol or4,4′-(3,3′,5,5′-tetramethyl) biphenol. In particular, the epoxy resinbased on 4,4′-bis(2,3-epoxypropoxy)-3,3′,5,5′-tetramethyl biphenyl ispreferable. When this biphenyl type epoxy resin is used, its compoundingamount is preferably 30% by weight or more, more preferably 50% byweight or more, still more preferably 60% by weight or more, relative tothe total amount of the epoxy resin, in order to exhibit itsperformance.

[0074] From the viewpoint of flowability and flame retardancy, bisphenolF type epoxy resin represented by the following general formula (II) ispreferable.

[0075] wherein R¹ to R⁸ may be the same or different and are selectedfrom a hydrogen atom, C₁₋₁₀ alkyl groups such as methyl group, ethylgroup, propyl group, butyl group, isopropyl group, isobutyl group etc.C₁₋₁₀ alkoxy groups such as methoxy group, ethoxy group, propoxy group,butoxy group etc., C₆₋₁₀ aryl groups such as phenyl group, tolyl group,xylyl group etc., and C₆₋₁₀ aralkyl groups such as benzyl group,phenethyl group etc., among which a hydrogen atom and a methyl group arepreferable, and n is an integer of 0 to 3.

[0076] A commercial product based on the bisphenol F type epoxy resinrepresented by the general formula (II) wherein each of R¹, R³, R⁶ andR⁸ is a methyl group, each of R², R⁴, R⁵ and R⁷ is a hydrogen atom and nis 0, is available under the trade name YSLV-80XY (a product of NipponSteel Chemical Co., Ltd.). When this bisphenol F type epoxy resin isused, its compounding amount is preferably 30% by weight or more, morepreferably 50% by weight or more, relative to the total amount of theepoxy resin, in order to exhibit its performance.

[0077] From the viewpoint of flowability and curing properties, stilbenetype epoxy resin represented by the following general formula (III) ispreferable.

[0078] wherein R¹ to R⁸ are selected from a hydrogen atom, a C₁₋₁₀ alkylgroup, C₁₋₁₀ alkoxy group, C₆₋₁₀ aryl group and C₆₋₁₀ aralkyl group, andall of the groups may be the same or different, and n is an integer of 0to 3.

[0079] A commercial product based on the stilbene type epoxy resinrepresented by the general formula (III) wherein each of R¹, R³, R⁶ andR⁸ is a methyl group, each of R², R⁴, R⁵ and R⁷ is a hydrogen atom and nis 0, is available under the trade name ESLV-210 (a product of SumitomoChemical Co., Ltd.). When this stilbene type epoxy resin is used, itscompounding amount is preferably 30% by weight or more, more preferably50% by weight or more, relative to the total amount of the epoxy resin,in order to exhibit its performance.

[0080] From the viewpoint of re-flow resistance, a sulfuratom-containing epoxy resin represented by the following general formula(VII) is preferable.

[0081] wherein R¹ to R⁸ may be the same or different, and are selectedfrom a hydrogen atom, a C₁₋₁₀ alkyl group such as methyl group, ethylgroup, propyl group, butyl group, isopropyl group, isobutyl group etc.,a C₁₋₁₀ alkoxy group such as methoxy group, ethoxy group, propoxy group,butoxy group etc., a C₆₋₁₀ aryl group such as phenyl group, tolyl group,xylyl group etc., and a C₆₋₁₀ aralkyl group such as benzyl group,phenethyl group etc., among which a hydrogen atom, a methyl group and anisobutyl group are preferable, and n is an integer of 0 to 3.

[0082] A commercial product based on the sulfur atom-containing epoxyresin represented by the general formula (VII) wherein each of R¹ and R⁸is a methyl group, each of R³ and R⁶ is an isobutyl group, each of R²,R⁴, R⁵ and R⁷ is a hydrogen atom and n is 0, is available under thetrade name YSLV-120TE (a product of Nippon Steel Chemical Co., Ltd.).When this sulfur atom-containing epoxy resin is used, its compoundingamount is preferably 30% by weight or more, more preferably 50% byweight or more, relative to the total amount of the epoxy resin, inorder to exhibit its performance.

[0083] To achieve the effect of the invention, it is more preferable toemploy at least one member selected from the biphenyl type epoxy resinrepresented by the general formula (I) above, the bisphenol F type epoxyresin represented by the general formula (II) above and the stilbenetype epoxy resin represented by the general formula (III) above, and twoor all of these resins may be used in combination. When two or moreresins are used in combination, their total compounding amount ispreferably 60% by weight or more, more preferably 80% by weight or more,relative to the total amount of the epoxy resin.

[0084] From the viewpoint of flowability, the melt viscosity at 150° C.of the epoxy resin (A) used in this invention is preferably 2 P or less,more preferably 1 P or less, still more preferably 0.5 P or less. Themelt viscosity refers to viscosity determined by an ICI cone plateviscometer.

[0085] The curing agent (B) used in this invention is not particularlylimited insofar as it is generally used in encapsulating epoxy resinmolding materials, and examples thereof include resins obtained in thepresence of an acid catalyst by condensation of phenols such as phenol,cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol,aminophenol etc. and/or naphthols such as α-naphthol, β-naphthol,dihydroxy naphthalene etc., or by co-condensation thereof with acompound having an aldehyde group, such as formaldehyde, and aralkyltype phenol resins such as phenol-aralkyl resin, naphthol-aralkyl resinetc. synthesized from phenols and/or naphthols and dimethoxyparaxyleneor bis(methoxymethyl)biphenyl, and these may be used singly or incombination thereof.

[0086] From the viewpoint of re-flow resistance, a phenol-aralkyl resinrepresented by the following general formula (IV) is preferable, and aphenol-aralkyl resin wherein R is a hydrogen atom and n is 0 to 8 onaverage is more preferable, and examples of such resin includep-xylylene type xyloc[phonetic transcription], m-xylylene type xylocetc. When this phenol-aralkyl resin is used, its compounding amount ispreferably 30% by weight or more, more preferably 50% by weight or more,still more preferably 60% by weight or more, relative to the totalamount of the curing agent, in order to exhibit its performance.

[0087] wherein R is selected from a hydrogen atom and a C₁₋₁₀substituted or unsubstituted monovalent hydrocarbon group, and n is aninteger of 0 to 10.

[0088] From the viewpoint of flame retardancy, a biphenyl type phenolresin represented by the general formula (V) is preferable.

[0089] wherein R¹ to R⁹ may be the same or different, and are selectedfrom a hydrogen atom, a C₁₋₁₀ alkyl group such as methyl group, ethylgroup, propyl group, butyl group, isopropyl group, isobutyl group etc.,a C₁₋₁₀ alkoxy group such as methoxy group, ethoxy group, propoxy group,butoxy group etc., a C₆₋₁₀ aryl group such as phenyl group, tolyl group,xylyl group etc., and a C₆₋₁₀ aralkyl group such as benzyl group,phenethyl group etc., among which a hydrogen atom and a methyl group arepreferable, and n is an integer of 0 to 10.

[0090] The biphenyl type phenol resin represented by the general formula(V) includes, for example, a compound wherein each of R¹ to R⁹ is ahydrogen atom, and particularly a condensate mixture containing at least50% by weight of condensates wherein n is 1 or more is preferable fromthe viewpoint of melt viscosity. Such compound is commercially availableunder the trade name MEH-7851 (a product of Meiwa Plastic IndustriesLtd.). When this biphenyl type phenol resin is used, its compoundingamount is preferably 30% by weight or more, more preferably 50% byweight or more, relative to the total amount of the curing agent, inorder to exhibit its performance.

[0091] The phenol-aralkyl resin represented by the general formula (IV)may be used in combination with the biphenyl type phenol resinrepresented by the general formula (V). When the two are used incombination, their total compounding amount is preferably 60% by weightor more, more preferably 80% by weight or more, relative to the totalamount of the curing agent.

[0092] From the viewpoint of flowability, the melt viscosity at 150° C.of the curing agent (B) used in this invention is preferably 2 P orless, more preferably 1 P or less. The melt viscosity refers to ICIviscosity.

[0093] The equivalent ratio of the epoxy resin (A) to the curing agent(B), that is, the ratio of the number of epoxy groups in the epoxy resinto the number of hydroxyl groups in the curing agent is not particularlylimited, but the ratio is set preferably in the range of 0.5 to 2, morepreferably in the range of 0.6 to 1.3, in order to reduce the amount ofunreacted materials. For obtaining the encapsulating epoxy resin moldingmaterial excellent in moldability and re-flow resistance, the ratio isset more preferably in the range of 0.8 to 1.2.

[0094] The silane coupling agent having a secondary amino group (C) usedin this invention is not particularly limited insofar as it is a silanecompound having a secondary amino group in the molecule, and examplesthereof include γ-anilinopropyltrimethoxy silane,γ-anilinopropyltriethoxy silane, γ-anilinopropylmethyldimethoxy silane,γ-anilinopropylmethyldiethoxy silane, γ-anilinopropylethyldiethoxysilane, γ-anilinopropylethyldimethoxy silane, γ-anilinomethyltrimethoxysilane, γ-anilinomethyltriethoxy silane, γ-anilinomethylmethyldimethoxysilane, γ-anilinomethylmethyldiethoxy silane,γ-anilinomethylethyldiethoxy silane, γ-anilinomethylethyldimethoxysilane, N-(p-methoxyphenyl)-γ-aminopropyltrimethoxy silane,N-(p-methoxyphenyl)-γ-aminopropyltriethoxy silane,N-(p-methoxyphenyl)-γ-aminopropylmethyldimethoxy silane,N-(p-methoxyphenyl)-γ-aminopropylmethyldiethoxy silane,N-(p-methoxyphenyl)-γ-aminopropylethyldiethoxy silane,N-(p-methoxyphenyl)-γ-aminopropylethyldimethoxy silane,γ-(N-methyl)aminopropyltrimethoxy silane,γ-(N-ethyl)aminopropyltrimethoxy silane,γ-(N-butyl)aminopropyltrimethoxy silane,γ-(N-benzyl)aminopropyltrimethoxy silane,γ-(N-methyl)aminopropyltriethoxy silane, γ-(N-ethyl)aminopropyltriethoxysilane, γ-(N-butyl)aminopropyltriethoxy silane,γ-(N-benzyl)aminopropyltriethoxy silane,γ-(N-methyl)aminopropylmethyldimethoxy silane,γ-(N-ethyl)aminopropylmethyldimethoxy silane,γ-(N-butyl)aminopropylmethyldimethoxy silane,γ-(N-benzyl)aminopropylmethyldimethoxy silane,N-β-(aminoethyl)-γ-aminopropyltrimethoxy silane,γ-(β-aminoethyl)aminopropyltrimethoxy silane,N-β-(N-vinylbenzylaminoethyl)-γ-aminopropyl trimethoxy silane, etc.Particularly from the viewpoint of achieving flowability andparticularly excellent disk flow, an amino silane coupling agentrepresented by the general formula (VI) is preferable.

[0095] wherein R¹ is selected from a hydrogen atom, a C₁₋₆ alkyl groupand a C₁₋₂ alkoxy group, R² is selected from a C₁₋₆ alkyl group and aphenyl group, R³ represents a methyl or ethyl group, n is an integer of1 to 6, and m is an integer of 1 to 3.

[0096] The aminosilane coupling agent represented by the general formula(VI) includes, for example, γ-anilinopropyltrimethoxy silane,γ-anilinopropyltriethoxy silane, γ-anilinopropylmethyldimethoxy silane,γ-anilinopropylmethyldiethoxy silane, γ-anilinopropylethyldiethoxysilane, γ-anilinopropylethyldimethoxy silane, γ-anilinomethyltrimethoxysilane, γ-anilinomethyltriethoxy silane, γ-anilinomethylmethyldimethoxysilane, γ-anilinomethylmethyldiethoxy silane,γ-anilinomethylethyldiethoxy silane, γ-anilinomethylethyldimethoxysilane, N-(p-methoxyphenyl)-γ-aminopropyltrimethoxy silane,N-(p-methoxyphenyl)-γ-aminopropyltriethoxy silane,N-(p-methoxyphenyl)-γ-aminopropylmethyldimethoxy silane,N-(p-methoxyphenyl)-γ-aminopropylmethyldiethoxy silane,N-(p-methoxyphenyl)-γ-aminopropylethyldiethoxy silane,N-(p-methoxyphenyl)-γ-aminopropylethyldimethoxy silane etc. Theaminosilane coupling agent is particularly preferablyγ-anilinopropyltrimethoxy silane.

[0097] When the silane coupling agent having a secondary amino group (C)is compounded into the encapsulating epoxy resin molding material,adhesion of the essential components to arbitrary components such asfillers is improved, resulting in bringing about a working effect bywhich the functions of the essential components and arbitrary componentsare preferably exhibited. From the viewpoint of preferable exhibition ofthe working effect of the arbitrary components particularly theinorganic filler (E) described later, the inorganic filler (E) is addedpreferably when the silane coupling agent having a secondary amino group(C) is used.

[0098] The compounding amount of the silane coupling agent having asecondary amino group (C) is preferably 0.037 to 4.75% by weight, morepreferably 0.088 to 2.3% by weight, relative to the encapsulating epoxyresin molding material. When its amount is less than 0.037% by weight,the disk flow is decreased, and molding defects such as wire sweep,voids etc. tend to occur easily, and adhesion to a frame tends to belowered. When the amount is higher than 4.75% by weight, the moldabilityof a package tends to be lowered.

[0099] When the inorganic filler (E) described later is added, thecompounding amount of the silane coupling agent having a secondary aminogroup (C) is 0.05 to 5% by weight, more preferably 0.1 to 2.5% byweight, relative to the inorganic filler (E). The reason for thisdefinition of the compounding amount is the same as described above.

[0100] The phosphate (D) used in this invention is not particularlylimited as long as it is an ester of phosphoric acid with an alcoholcompound or a phenol compound, and examples thereof include trimethylphosphate, triethyl phosphate, triphenyl phosphate, tricresyl phosphate,trixylenyl phosphate, cresyldiphenyl phosphate, xylenyldiphenylphosphate, tris (2,6-dimethylphenyl) phosphate, and an aromaticcondensed phosphate. From the viewpoint of hydrolysis resistance, anaromatic condensed phosphate represented by the following generalformula (X) is preferable.

[0101] Examples of the phosphate (D) of the formula (X) above includephosphates shown by the following structural formulae (XI) to (XV):

[0102] The amount of the phosphate (D) added is preferably in the rangeof 0.2 to 3.0% by weight in terms of phosphorus atom, relative to thewhole compounding components excluding the filler. When its amount isless than 0.2% by weight, the disk flow is decreased, and moldingdefects such as wire sweep, voids etc. occur easily. Further, thephosphate (D) has a flame-retardant effect so that when used also as aflame-retardant, the flame retardant effect tends to be lowered. Whenthe amount is higher than 3.0% by weight, moldability and humidityresistance may be lowered, and the phosphate may bleed out at the timeof molding to deteriorate the outward appearance.

[0103] In this invention, the inorganic filler (E) is preferablycompounded in addition to the components (A), (B) and (C) or (D). Theinorganic filler (E) used in this invention is compounded into theencapsulating epoxy resin molding material thereby improving moistureabsorption, lowering coefficient of linear expansion, improving thermalconductivity and improving strength. Examples thereof include powders,spherical beads, glass fibers etc. prepared from fused silica,crystalline silica, alumina, zircon, calcium silicate, calciumcarbonate, potassium titanate, silicon carbide, silicon nitride,aluminum nitride, boron nitride, beryllia, zirconia, zircon, forsterite,steatite, spinel, mullite, titania etc. Further, inorganic fillershaving a flame retardant effect include aluminum hydroxide, magnesiumhydroxide, zinc borate, zinc molybdate etc. These inorganic fillersmaybe used singly or in combination thereof. In particular, fused silicais preferable from the viewpoint of a reduction in coefficient of linearexpansion and alumina is preferable from the viewpoint of higher thermalconductivity, while the shape of the inorganic fillers is preferablyspherical from the viewpoint of flowability during molding and abrasionof molds.

[0104] When the inorganic filler (E) is used, its compounding amount ispreferably 75% by weight or more relative to the encapsulating epoxyresin molding material from the viewpoint of re-flow resistance. Fromthe viewpoint of improvements in re-flow resistance, flowability,moldability and strength, the amount is more preferably 80 to 95% byweight, still more preferably 88 to 92% by weight.

[0105] When the inorganic filler (E) is used, a coupling agent ispreferably compounded into the encapsulating epoxy resin moldingmaterial of the invention in order to improve adhesion of the resincomponent to the filler. The coupling agent is preferably the silanecoupling agent having a secondary amino group (C), but if necessary,other coupling agents can also be used in combination in such a range asto achieve the effect of the invention. The other coupling agents whichcan be used in combination with the silane coupling agent having asecondary amino group (C) are not particularly limited as long as theyare generally used in encapsulating epoxy resin molding materials, andexamples thereof include silane compounds having a primary amino groupand/or tertiary amino group, various kinds of silane type compounds suchas epoxysilane, mercaptosilane, alkyl silane, ureidosilane, vinylsilaneetc., titanium type compounds, aluminum chelates, aluminum/zirconiumtype compounds etc. Specific examples of these compounds include silanetype coupling agents such as vinyltrichlorosilane, vinyltriethoxysilane, vinyltris(β-methoxyethoxy) silane, γ-methacryloxypropyltrimethoxy silane, β-(3,4-epoxycyclohexyl) ethyltrimethoxy silane,γ-glycidoxypropyltrimethoxy silane, γ-glycidoxypropylmethyldimethoxysilane, vinyltriacetoxy silane, γ-mercaptopropyltrimethoxy silane,γ-aminopropyltrimethoxy silane, γ-aminopropylmethyldimethoxy silane,γ-aminopropyltriethoxy silane, γ-aminopropylmethyldiethoxy silane,γ-(N,N-dimethyl) aminopropyltrimethoxy silane, γ-(N,N-diethyl)aminopropyltrimethoxy silane, γ-(N,N-dibutyl) aminopropyltrimethoxysilane, γ-(N-methyl) anilinopropyltrimethoxy silane, γ-(N-ethyl)anilinopropyltrimethoxy silane, γ-(N,N-dimethyl)aminopropyltriethoxysilane, γ-(N,N-diethyl) aminopropyltriethoxy silane, γ-(N,N-dibutyl)aminopropyltriethoxy silane, γ-(N-methyl) anilinopropyltriethoxy silane,γ-(N-ethyl) anilinopropyltriethoxy silane, γ-(N,N-dimethyl)aminopropylmethyldimethoxy silane, γ-(N,N-diethyl)aminopropylmethyldimethoxy silane, γ-(N,N-dibutyl)aminopropylmethyldimethoxy silane, γ-(N-methyl)anilinopropylmethyldimethoxy silane, γ-(N-ethyl)anilinopropylmethyldimethoxy silane, N-(trimethoxysilylpropyl) ethylenediamine, N-(dimethoxymethylsilylisopropyl) ethylene diamine,methyltrimethoxy silane, dimethyldimethoxy silane, methyltriethoxysilane, γ-chloropropyltrimethoxy silane, hexamethyl disilane,vinyltrimethoxy silane and γ-mercaptopropylmethyl dimethoxy silane;

[0106] and titanate type coupling agents such as isopropyltriisostearoyltitanate, isopropyl tris(dioctylpyrophosphate) titanate, isopropyltri(N-aminoethyl-aminoethyl) titanate, tetraoctylbis(ditridecylphosphite) titanate,tetra(2,2-diallyloxymethyl-1-butyl)bis (ditridecyl) phosphite titanate,bis(dioctylpyrophosphate) oxyacetate titanate, bis(dioctylpyrophosphate)ethylene titanate, isopropyltrioctanoyl titanate, isopropyldimethacrylisostearoyl titanate, isopropyltridecylbenzenesulfonyl titanate,isopropylisostearoyldiacryl titanate, isopropyl tri(dioctylphosphate)titanate, isopropyltricumylphenyl titanate and tetraisopropylbis(dioctylphosphite) titanate, and these may be used singly or incombination thereof.

[0107] When these other coupling agents are used, the amount of thesilane coupling agent having a secondary amino group (C) is preferably30% by weight or more, more preferably 50% by weight or more, relativeto the total amount of the coupling agent, in order to exhibit itsperformance.

[0108] The total amount of the coupling agent containing the silanecoupling agent having a secondary amino group (C) is preferably 0.037 to4.75% by weight, more preferably 0.088 to 2.3% by weight, relative tothe encapsulating epoxy resin molding material. When the amount is lessthan 0.037% by weight, the adhesion to a frame tends to be lowered,while when the amount is higher than 4.75% by weight, the moldability ofa package tends to be lowered.

[0109] When the inorganic filler (E) is added, the amount of thecoupling agent compounded is 0.05 to 5% by weight, more preferably 0.1to 2.5% by weight, relative to the inorganic filler (E). The reason forthis definition of the compounding amount is the same as describedabove.

[0110] From the viewpoint of curing properties, the curing promoter (F)is further incorporated in this invention. The curing promoter (F) usedin this invention is not particularly limited insofar as it is generallyused in encapsulating epoxy resin molding materials, and examplesthereof include cycloamidine compounds such as1,8-diaza-bicyclo(5,4,0)undecene-7, 1,5-diaza-bicyclo(4,3,0)nonene,5,6-dibutylamino-1,8-diaza-bicyclo(5,4,0)undecene-7 etc., compoundshaving intramolecular polarization, comprising the above compounds towhich maleic anhydride, a quinone compound such as 1,4-benzoquinone,2,5-toluquinone, 1,4-naphthoquinone, 2,3-dimethylbenzoquinone,2,6-dimethylbenzoquinone, 2,3-dimethoxy-5-methyl-1,4-benzoquinone,2,3-dimethoxy-1,4-benzoquinone, phenyl-1,4-benzoquinone etc., or acompound having a n bonding such as diazophenyl methane, phenol resinetc. has been added, tertiary amines such as benzyldimethylamine,triethanolamine, dimethylaminoethanol, tris(dimethylaminomethyl)phenoletc. and derivatives thereof, imidazoles such as 2-methyl imidazole,2-phenyl imidazole, 2-phenyl-4-methyl imidazole etc. and derivativesthereof, organic phosphines such as tributyl phosphine, methyl diphenylphosphine, triphenyl phosphine, tris(4-methylphenyl)phosphine, diphenylphosphine, phenyl phosphine etc., phosphorus compounds havingintermolecular polarization, comprising maleic anhydride, the quinonecompound, or the compound having a π bonding such as diazophenylmethane, phenol resin etc. added to the organic phosphine, andtetraphenyl borates such as tetraphenyl phosphonium tetraphenyl borate,triphenyl phosphine tetraphenyl borate, 2-ethyl-4-methylimidazoletetraphenyl borate, N-methylmorpholine tetraphenyl borate etc. andderivatives thereof, and these may used singly or in combinationthereof. Particularly from the viewpoint of moldability and re-flowresistance, an adduct of organic phosphine and a quinone compound ispreferable.

[0111] Although the amount of the curing promoter compounded is notparticularly limited insofar as the curing promoting effect can beachieved, the amount is preferably 0.005 to 2% by weight, morepreferably 0.01 to 0.5% by weight, relative to the encapsulating epoxyresin molding material. When the amount is less than 0.005% by weight,the resulting material is inferior in curing in a short time, while whenthe mount is higher than 2% by weight, the curing rate is too high thusmaking preparation of good molded articles difficult.

[0112] From the viewpoint of preventing occurrence of molding defectssuch as wire sweep, voids etc., the disk flow of the encapsulating epoxyresin molding material of the invention is preferably 80 mm or more. Thedisk flow is an indicator of flowability under a loading of 78 N, andrefers to the average of the measured major axis and minor axis of amolded product produced by molding 5 g encapsulating epoxy resin moldingmaterial under the conditions of a mold temperature of 180° C., aloading of 78 N, and a curing time of 90 seconds.

[0113] By using the encapsulating epoxy resin molding material having adisk flow of 80 mm or more, it is possible to reduce molding defectssuch as wire sweep and voids even on a semiconductor device having asemiconductor chip arranged on a thin, multi-pin, long wire, or narrowpad pitch or on a mounted substrate.

[0114] The encapsulating epoxy resin molding material of the inventionincludes an encapsulating epoxy resin molding material comprising, asessential components, the epoxy resin (A), the curing agent (B) and thesilane coupling agent having a secondary amino group (C) or thephosphate (D), and if necessary (E) inorganic filler and the curingpromoter (F).

[0115] The encapsulating epoxy resin molding material of the inventionis used preferably in a semiconductor device having at least one of thefollowing constitutions (a) to (f):

[0116] (a) at least one of an encapsulating material of an upper side ofa semiconductor chip and an encapsulating material of a lower side ofthe semiconductor chip has a thickness 0.7 mm or less;

[0117] (b) the pin count is 80 or more;

[0118] (c) the length of the wire is 2 mm or more;

[0119] (d) the pad pitch on the semiconductor chip is 90 μm or less;

[0120] (e) the thickness of a package, in which the semiconductor chipis disposed on a mounting substrate, is 2 mm or less;

[0121] (f) the area of the semiconductor chip is 25 mm² or more.

[0122] The encapsulating epoxy resin molding material of the inventioncan be used in the semiconductors device having at least one of theabove constitutions (a) to (f),particularly preferably in semiconductordevices having the following constitution.

[0123] From the viewpoint of a reduction in voids, the encapsulatingepoxy resin molding material of the invention is used preferably in asemiconductor device having the constitution (a) or (e), more preferablyin a semiconductor device having the constitution (a), still morepreferably in a semiconductor device having the constitution (a) and atleast one of the other constitutions.

[0124] From the viewpoint of a reduction in wire sweep, theencapsulating epoxy resin molding material of the invention is usedpreferably in a semiconductor device having the constitution (b), (c) or(d), more preferably in a semiconductor device having the constitution(b), still more preferably in a semiconductor device having theconstitutions (b) and (c) or the constitutions (b) and (d), particularlypreferably in a semiconductor device having the constitutions (b), (c)and (d).

[0125] From the viewpoint of a reduction in voids and a reduction inwire sweep, the encapsulating epoxy resin molding material of theinvention is used preferably in a semiconductor device having theconstitutions (a) and (b), the constitutions (a) and (c), theconstitutions (a) and (d), the constitutions (a) and (f), or theconstitutions (c) and (e), more preferably in a semiconductor devicehaving the constitutions (a), (b) and (d) or the constitutions (c), (e)and (f), still more preferably in a semiconductor device having theconstitutions (a), (b), (d) and (f), or the constitutions (a), (b), (c)and (d).

[0126] In a first preferable embodiment of the encapsulating epoxy resinmolding material of the invention, the epoxy resin (A), the curing agent(B), the silane coupling agent having a secondary amino group (C), andarbitrary components, that is, the inorganic filler (E) and otheradditives, are combined and their amounts are regulated, whereby theencapsulating epoxy resin molding material having a disk flow of 80 mmor more can be obtained. Selection of the epoxy resin (A), the curingagent (B) and the silane coupling agent having a secondary amino group(C), and the compounding amount of the inorganic filler (E) if used, areparticularly important.

[0127] In a second preferable embodiment of the encapsulating epoxyresin molding material of the invention, the epoxy resin (A), the curingagent (B), the silane coupling agent having a secondary amino group (C),the inorganic filler (E) and the curing promoter (F) are combined andtheir amounts are regulated, whereby the encapsulating epoxy resinmolding material having a disk flow of 80 mm or more can be obtained.Selection of the epoxy resin (A), the curing agent (B), the silanecoupling agent having a secondary amino group (C) and the curingpromoter (F), and the compounding amount of the inorganic filler (E),are particularly important.

[0128] In a third preferable embodiment of the encapsulating epoxy resinmolding material of the invention, the epoxy resin (A), the curing agent(B), the phosphate (D), the inorganic filler (E), the curing promoter(F), and components used as other additives are combined and theiramounts are regulated, whereby the encapsulating epoxy resin moldingmaterial having a disk flow of 80 mm or more can be obtained. Selectionof the epoxy resin (A), the curing agent (B), the phosphate (D) and thecuring promoter (F), and the compounding amount of the inorganic filler(E), are particularly important, and the compounding amounts of thesecomponents are as described above.

[0129] The encapsulating epoxy resin molding material of the inventionmay, if necessary, incorporate known flame-retardants such as brominatedepoxy resin, antimony trioxide, phosphorus compounds such as phosphate,red phosphorus etc., nitrogen-containing compounds such as melamine,melamine cyanurate, melamine-modified resin, guanamine-modified phenolresin etc., phosphorus/nitrogen-containing compounds such ascyclophosphagen, and metal compounds such as zinc oxide, iron oxide,molybdenum oxide, ferrocene etc.

[0130] From the viewpoint of improvements in humidity resistance andhigh-temperature resistance of semiconductors such as IC, theencapsulating epoxy resin molding material of the invention can alsoincorporate anion exchangers. The anion exchangers are not particularlylimited, and may be those known in the art, and examples thereof includehydrotalcite and hydrous oxides of an element selected from magnesium,aluminum, titanium, zirconium and bismuth, and these are used singly orin combination thereof. In particular, the hydrotalcite represented bythe following formula (VIII) is preferable.

Mg_(1-X)Al_(X)(OH)₂(CO₃)_(X/2).mH₂O   (VIII)

[0131] (0<X≦0.5; m is an integer)

[0132] Further, the encapsulating epoxy resin molding material of theinvention can, if necessary, incorporate other additives, for examplereleasing agents such as higher fatty acids, higher fatty acid metalsalts, ester type wax, polyolefin type wax, polyethylene, oxidizedpolyethylene etc., coloring agents such as carbon black, andstress-releasing agents such as silicone oil and silicone rubber powder.

[0133] The encapsulating epoxy resin molding material of the inventioncan be prepared by any means which can disperse and mix the variousstarting materials, and a method of mixing predetermined amounts of thestarting materials sufficiently in a mixer, then mixing or melt-kneadingthe mixture in a mixing roll, an extruder, a stone mill, a planetarymixer etc., cooling the mixture, defoaming it if necessary, and grindingit, can be mentioned as a general means. If necessary, the product maybe formed into tablets having dimensions and weight meeting moldingconditions if necessary.

[0134] The most general method of encapsulating a semiconductor devicewith the encapsulating epoxy resin molding material of the invention islow-pressure transfer molding, but injection molding, compressionmolding etc. can also be mentioned. A dispense system, injection system,printing system etc. may also be used.

[0135] The semiconductor device of this invention includes a generalsemiconductor device comprising an active element such as asemiconductor chip, transistor, diode, thyristor etc. or a passiveelement such as capacitor, resistance element, coil etc. installed on asupporting member such as a lead frame, a wired tape carrier, a circuitboard, glass, a silicon wafer etc. or on a mounted substrate, wherein anencapsulating epoxy resin molding material comprising, as essentialcomponents, the epoxy resin (A), the curing agent (B) and the silanecoupling agent having a secondary amino group (C) or the phosphate (D),and if necessary (E) inorganic filler and the curing promoter (F) isused as an encapsulating material.

[0136] The mounted substrate is not particularly limited, and includee.g. an interposer substrate such as organic substrate, organic film,ceramic substrate, glass substrate etc., a glass substrate for liquidcrystal, a substrate for MCM (multi chip module), a substrate for hybridIC, etc.

[0137] Preferably, the semiconductor device of the invention further hasat least one of the following constitutions (a) to (f):

[0138] (a) at least one of an encapsulating material of an upper side ofa semiconductor chip and an encapsulating material of a lower side ofthe semiconductor chip has a thickness 0.7 mm or less;

[0139] (b) the pin count is 80 or more;

[0140] (c) the length of the wire is 2 mm or more;

[0141] (d) the pad pitch on the semiconductor chip is 90 μm or less;

[0142] (e) the thickness of a package, in which the semiconductor chipis disposed on a mounting substrate, is 2 mm or less;

[0143] (f) the area of the semiconductor chip is 25 mm² or more.

[0144] Out of the semiconductor devices having at least one of theconstitutions (a) to (f) described above, those semiconductor deviceshaving the following constitution are particularly preferable from theviewpoint of a higher effect of the invention.

[0145] From the viewpoint of a higher effect on reduction in voids, thesemiconductor device is preferably a semiconductor device having theconstitution (a) or (e), more preferably a semiconductor device havingthe constitution (a), still more preferably a semiconductor devicehaving the constitution (a) and at least one of the other constitutions.

[0146] From the viewpoint of a higher effect on reduction in wire sweep,the semiconductor device is preferably a semiconductor device having theconstitution (b), (c) or (d), more preferably a semiconductor devicehaving the constitution (b), still more preferably a semiconductordevice having the constitutions (b) and (c) or the constitutions (b) and(d), particularly preferably a semiconductor device having theconstitutions (b), (c) and (d).

[0147] From the viewpoint of a higher effect on reduction in voids andwire sweep, the semiconductor device is preferably a semiconductordevice having the constitutions (a) and (b), the constitutions (a) and(c), the constitutions (a) and (d), the constitutions (a) and (f), orthe constitutions (c) and (e), more preferably a semiconductor devicehaving the constitutions (a), (b) and (d) or the constitutions (c), (e)and (f), still more preferably a semiconductor device having theconstitutions (a), (b), (d) and (f), or the constitutions (a), (b), (c)and (d).

[0148] Such semiconductor devices include, for example, resinencapsulating type IC such as DIP (dual inline package), PLCC (plasticleaded chip carrier), QFP (quad flat package), SOP (small outlinepackage), SOJ (small outline J-lead package), TSOP (thin small outlinepackage), TQFP (thin quad flat package) etc., produced by fixing anelement such as semiconductor chip on a lead frame (island tab),connecting a terminal (e.g. a bonding pad) of the element to the lead bywire bonding or bumping, and then encapsulating the semiconductor chipby transfer molding with the encapsulating epoxy resin molding materialof the invention; TCP (tape carrier package) wherein a semiconductorchip lead-bonded onto a tape carrier was encapsulated with theencapsulating epoxy resin molding material of the invention; COB (chipon board) wherein a semiconductor chip connected by wire bonding, flipchip bonding or a solder to a wire formed on a circuit board or glasswas encapsulated with the encapsulating epoxy resin molding material ofthe invention; a semiconductor device such as COG (chip on glass) havinga bare chip mounted thereon; hybrid IC wherein an active element such assemiconductor chip, transistor, diode, thyristor etc. and/or a passiveelement such as capacitor, resistance element, coil etc., connected bywire bonding, flip chip bonding, a solder etc. to a wire formed on acircuit board or glass, was encapsulated with the encapsulating epoxyresin molding material of the invention; BGA (ball grid array) producedby installing a semiconductor chip on an interposer substrate having aterminal for connection to a MCM (multi chip module) mother board, thenconnecting the semiconductor chip by bumping or wire bonding to a wireformed on the interposer substrate and then encapsulating thesemiconductor-installed side with the encapsulating epoxy resin moldingmaterial of the invention; CSP (chip size package); MCP (multi chipPackage) etc. The semiconductor device may be a stacked package havingtwo or more laminated elements installed on a mounted substrate or amold array package having two or more elements encapsulated all at oncewith the encapsulating epoxy resin molding material.

[0149]FIG. 1 shows one example of the semiconductor device of theinvention, but the semiconductor device of the invention is not limitedthereto. FIG. 1 shows QFP produced by fixing a semiconductor chip 3 viaa die bond 2 onto an island (tab) 1, then connecting a terminal (bondingpad) of the semiconductor chip 3 to a lead pin 4 via a wire 5 (wirebonding) and encapsulating the semiconductor chip with an encapsulatingepoxy resin molding material (encapsulating material) 6, and FIG. 1 (a)is a sectional view, (b) is a top view (partially perspective view), (c)is a top view (partially perspective view) of the enlarged terminal(bonding pad) 7 on the semiconductor chip 3.

[0150] The semiconductor device of the invention shown in FIG. 1 ispreferably a thin semiconductor device wherein the thickness a of theencapsulating material 6 on the upper side of the semiconductor chipand/or the thickness b of the encapsulating material 6 on the lower sideof the semiconductor chip is 0.7 mm or less, and may be 0.5 mm or lessor 0.3 mm or less. The thickness of the package (total thickness of thesemiconductor device) c is preferably 2.0 mm or less, more preferably1.5 mm or less, and may be 1.0 mm or less.

[0151] The area d of the semiconductor chip is preferably 25 mm² or moreand may be 50 mm² or more, or 80 mm² or more.

[0152] The semiconductor device is preferably a multi-pin typesemiconductor device wherein the pin count 4 is 80 or more, and may be100 or more or 200 or more.

[0153] The length of the wire for connecting the semiconductor chip tothe lead pin is preferably 2 mm or more, and may be 3 mm or more, or 5mm or more.

[0154] The pitch e between bonding pads on the semiconductor chip ispreferably 90 μm or less, and may be 80 μm or less, or 60 μm or less.

[0155]FIG. 3 and FIG. 5 show other examples of the semiconductor deviceof the invention, but the semiconductor device of the invention is notlimited thereto. An element having the same function as in FIG. 1 isgiven the same symbol and its description is omitted.

[0156]FIG. 3 shows BGA produced by fixing a semiconductor chip 3 via adie attach 2 onto an insulating base substrate 8, then connecting aterminal (bonding pad) of the semiconductor chip 3 to a terminal on thecircuit board via a wire 5 (by wire bonding) and encapsulating thesemiconductor chip with an encapsulating epoxy resin molding material(encapsulating material) 6, and (a) shows a sectional view, (b) is apartially perspective, top view, and (c) is an enlarged view of thebonding pad. In FIG. 3, 9 is a solder ball.

[0157] In the semiconductor device shown in FIG. 3, the thickness a ofthe package is preferably 2 mm or less, and may be 1.5 mm or less, or1.0 mm or less.

[0158] The area d of the semiconductor chip is preferably 25 mm² ormore, and may be 50 mm² or more, or 80 mm² or more.

[0159] The length of the wire 5 for connecting the semiconductor chip tothe lead pin is preferably 2 mm or more, and may be 3 mm or more, or 5mm or more.

[0160] The pitch e between bonding pads on the semiconductor chip ispreferably 90 μm or less, and may be 80 μm or less, or 60 μm or less.

[0161]FIG. 5 shows mold array package type stacked BGA, and (a) is a topview (partially perspective view), and (b) is a partially enlarged,sectional view. In FIG. 5, 9 is a solder ball.

[0162] The semiconductor device shown in FIG. 5 should be asemiconductor device wherein the thickness a of the package is 2 mm orless, and the thickness of the package may be 1.5 mm or less, or 1.0 mmor less.

[0163] By encapsulating a semiconductor device with the semiconductorencapsulating epoxy resin molding material of the invention, it ispossible to reduce molding defects such as wire sweep and voids even ona thin semiconductor having the thickness of the encapsulating materialdescribed above, on a semiconductor device having the thickness of theencapsulating material described above and the area of the semiconductorchip described above, and a semiconductor device having the number ofpins, the length of the wire and the pad pitch described above.

[0164] Hereinafter, this invention is described by Examples, whichhowever are not intended to limit the scope of this invention.

EXAMPLES I-1 to I-5 COMPARATIVE EXAMPLES I-1 to I-15

[0165] (A-I) Preparation of Encapsulating Epoxy Resin Molding Materials

[0166] Epoxy resins such as a biphenyl type epoxy resin having an epoxyequivalent of 196, a melting point of 106° C. and a melt viscosity (ICIviscosity) at 150° C. of 0.1 poise (trade name: Epicoat YX-4000H,manufactured by Yuka Shell Epoxy Co., Ltd.), a bisphenol F type epoxyresin having an epoxy equivalent of 186, a melting point of 75° C. and amelt viscosity (ICI viscosity) at 150° C. of 0.1 poise (trade name:YSLV-80XY, manufactured by Nippon Steel Chemical Co., Ltd.), a stilbenetype epoxy resin having an epoxy equivalent of 210, a melting point of120° C. and a melt viscosity (ICI viscosity) at 150° C. of 0.1 poise(trade name: ESLV-210, manufactured by Sumitomo Chemical Co., Ltd.), ano-cresol novolak type epoxy resin having an epoxy equivalent of 195, asoftening point of 65° C. and a melt viscosity (ICI viscosity) at 150°C. of 2.0 poises (trade name: ESCN-190, manufactured by SumitomoChemical Co., Ltd.) and an bisphenol A type brominated epoxy resinhaving an epoxy equivalent of 375, a softening point of 80° C., a meltviscosity (ICI viscosity) at 150° C. of 1.3 poises and a bromine contentof 48% by weight (trade name: ESB-400T, manufactured by SumitomoChemical Co., Ltd.);

[0167] curing agents such as a phenol-aralkyl resin having a softeningpoint of 70° C., a hydroxyl equivalent of 175 and a melt viscosity (ICIviscosity) at 150° C. of 2.0 poises (trade name: Milex XL-225,manufactured by Mitsui Chemicals, Inc.), a biphenyl type phenol resinhaving a softening point of 80° C., a hydroxyl equivalent of 199 and amelt viscosity (ICI viscosity) at 150° C. of 1.4 poises (trade name:MEH-7851, manufactured by Meiwa Plastic Industries, Ltd.) and a phenolnovolak resin having a softening point of 80° C., a hydroxyl equivalentof 106 and a melt viscosity (ICI viscosity) at 150° C. of 1.8 poises(trade name: H-1, manufactured by Meiwa Plastic Industries, Ltd.)

[0168] a curing accelerator such as triphenyl phosphine;

[0169] coupling agents such as γ-anilinopropyl trimethoxysilane(secondary amino silane), γ-aminopropyl trimethoxysilane (primary aminosilane), γ-(N-methyl)anilinopropyl trimethoxysilane (tertiary aminosilane) and γ-glycidoxypropyltrimethoxy silane (epoxy silane);

[0170] an inorganic filler of spherical fused silica having an averageparticle diameter of 17.5 μm and a specific surface area of 3.8 m²/g;

[0171] and other additives such as antimony trioxide, carnauba wax(manufactured by K.K. Serarika NODA) and carbon black (trade name:MA-100, manufactured by Mitsubishi Chemical Corporation) were compoundedin the amounts “part by weight” shown in Table 1 and then kneaded withrolls at a kneading temperature of 80° C. for a kneading time of 10minutes, to prepare encapsulating epoxy resin molding materials I-1 toI-10 (I-6 to I-10 are Comparative Examples). TABLE 1 Compositions ofencapsulating epoxy resin molding materials (parts by weight)Encapsulating epoxy resin molding materials I Components 1 2 3 4 5 6 7 89 10 Biphenyl type epoxy resin 85 85 — — — 85 85 85 85 — Bisphenol Ftype epoxy resin — — 85 — — — — — — — Stilbene type epoxy resin — — — 85— — — — — — o-Cresol novolak type epoxy resin — — — — 85 — — — — 85Brominated epoxy resin 15 15 15 15 15 15 15 15 15 15 Phenol-aralkylresin 83 — 87 78 — 83 83 83 — — Biphenyl phenol resin — 94 — — — — — —94 — Phenol novolak resin — — — — 50 — — — — 50 Curing accelerator 3.53.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 Secondary amino silane 4.5 4.5 4.54.5 4.5 — — — — — Primary amino silane — — — — — — — 4.5 — — Tertiaryamino silane — — — — — — 4.5 — — — Epoxy silane — — — — — 4.5 — — 4.54.5 Fused silica 1507 1593 1538 1469 737 1507 1507 1507 1593 737Antimony trioxide 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 Carnauba wax2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 Carbon wax 3.5 3.5 3.5 3.5 3.53.5 3.5 3.5 3.5 3.5 Amount of inorganic filler 88 88 88 88 81 88 88 8888 81 (weight-%)

TEST EXAMPLE 1

[0172] The characteristics of the encapsulating epoxy resin moldingmaterials (I-1) to (I-10) prepared above were examined in the followingtests. The results are shown in Table 2.

[0173] (1) Spiral Flow

[0174] The encapsulating epoxy resin molding material was molded with amold for measuring spiral flow according to EMMI-1-66 by a transfermolding machine at a mold temperature of 180° C., at a molding pressureof 6.9 MPa for a curing time of 90 seconds, and then the distance offlow (cm) was determined.

[0175] (2) Disk Flow

[0176] Using a disk flow-measuring flat mold having an upper mold of 200mm (W)×200 mm (D)×25 mm (H) and a lower mold of 200 mm (W)×200 mm (D)×15mm (H), the weighed sample (encapsulating epoxy resin molding material)5 g, was placed on the center of the lower mold heated at 180° C.; and 5seconds later, the upper mold heated at 180° C. was closed; and thesample was compression-molded under a loading of 78 N for a curing timeof 90 seconds; and the major axis (mm) and the minor axis (mm) of themolded product were measured with calipers, and their average value (mm)was determined as disk flow. TABLE 2 Characteristics of theencapsulating epoxy resin molding materials Character- Encapsulatingepoxy resin molding materials I istics 1 2 3 4 5 6 7 8 9 10 Spiral 107112 115 113 113 89 94 —* 90 85 flow (cm) Disk flow 83 87 92 90 89 73 75—* 76 70 (mm)

[0177] (B-I) Preparation of Semiconductor Devices

[0178] Using the encapsulating epoxy resin molding materials I-1 toI-10, the semiconductor devices in Examples I-1 to I-5 and ComparativeExamples I-1 to I-15 were prepared. Encapsulation in the encapsulatingepoxy resin molding material was carried out by molding at a moldtemperature of 180° C., at a molding pressure of 6.9 MPa for a curingtime of 90 seconds in a transfer molding machine, followed bypost-curing at 180° C. for 5 hours.

[0179] Using the encapsulating epoxy resin molding materials I-1 to I-5,the thin, multi-pin, long wire and narrow-pad-pitch semiconductordevices in Examples I-1 to I-5 (100-pin LQFP) having 100 lead pins andan external dimension of 20 mm×20 mm and a total thickness of 1.5 mm,mounted with a test silicone chip of 10 mm×10 mm×0.4 mm (area 100 mm²)with a bonding pad pitch of 80 μm, subjected to wire bonding with a wireof 18 μm in diameter and 3 mm in length and having the encapsulatingmaterial of 0.5 mm in thickness on the upper side of the semiconductorchip and the encapsulating material of 0.5 mm in thickness on the lowerside of the semiconductor chip, were prepared.

[0180] Using the encapsulating epoxy resin molding materials I-6 toI-10, the thin, multi-pin, long wire and narrow-pad-pitch semiconductordevices in Comparative Examples I-1 to I-5 (100-pin LQFP) with 100 leadpins were prepared in the same manner as in Examples I-1 to I-5.

[0181] Using the encapsulating epoxy resin molding materials I-1 toI-10, the semiconductor devices in Comparative Examples I-6 to I-16(64-pin QFP-1H) having 64 lead pins and an external dimension of 20mm×20 mm and a total thickness of 2.7 mm, mounted with a test siliconechip of 4 mm×4 mm×0.4 mm (area 16 mm²) with a bonding pad pitch of 100μm, subjected to wire bonding with a wire of 18 μm in diameter and 1.5mm in length and having the encapsulating material of 1.1 mm inthickness on the upper side of the semiconductor chip and theencapsulating material of 1.1 mm in thickness on the lower side of thesemiconductor chip, were prepared. TEST EXAMPLE 2

[0182] The prepared semiconductor devices in Examples I-1 to I-5 andComparative Examples I-1 to I-15 were evaluated by the following tests.The evaluation results are shown in Tables 3 and 4.

[0183] (1) Wire Sweep (Indicator of Wire Sweep)

[0184] Using a soft-X-ray measuring device (PRO-TEST 100 type,manufactured by Softex Co., Ltd.), the semiconductor device was examinedfor Wire sweep by fluroscopic observation at a voltage of 100 kV at acurrent of 1.5 mA, to evaluate wire sweep. As shown in FIGS. 2 or 4, theobservation was carried in a direction perpendicular to the framesurface, and the minimum distance L of the wire bonding (that is, thedistance between the terminal 7 of the semiconductor chip 3 and the leadpin 4 or the bonded region of the terminal 10 on the wiring board) andthe maximum deformation X of the wire 5 were measured, and X/L×100 wascalculated as wire deformation (%).

[0185] (2) Void Generation

[0186] The X-ray examination of the semiconductor device was carried outin the same manner as in (1) above, and whether voids of 0.1 mm or morein diameter had been generated or not was observed, and void generationwas evaluated in terms of the number of semiconductor devices withvoids/the number of test semiconductor devices. TABLE 3 Evaluationresult 1 of the semiconductor devices Examples I Comparative Examples ICharacteristics 1 2 3 4 5 1 2 3 4 5 Encapsulating epoxy resin molding 12 3 4 5  6  7 8  9 10 materials I Wire sweep (%) 5 3 2 2 2 14 11 not 1218 Void generation 0/20 0/20 0/20 0/20 0/20 4/20 3/20 moldable 2/20 5/20

[0187] TABLE 4 Evaluation result 2 of the semiconductor devices ExamplesI Comparative Examples I Characteristics 6 7 8 9 10 11 12 13 14 15Encapsulating epoxy resin molding 1 2 3 4 5 6 7 8 9 10 materials I Wiresweep (%) 0 0 0 0 0 5 3 not 4  7 Void generation 0/20 0/20 0/20 0/200/20 0/20 0/20 moldable 0/20 0/20

[0188] The thin, multi-pin, long wire and narrow-pad-pitch semiconductordevices in Comparative Examples I-1 to I-5, which had been encapsulatedin the encapsulating epoxy resin molding materials I-6 to I-10containing neither the silane coupling agent having a secondary aminogroup (C) nor the phosphate (D), generated the molding defect of eitherwire sweep (high wire deformation) and void generation or a moldinginability due to gelation.

[0189] On the other hand, the encapsulating epoxy resin moldingmaterials I-1 to I-5 containing the epoxy resin (A), the curing agent(B) and the silane coupling agent having a secondary amino group (C)were excellent in fluidity, and the thin, multi-pin, long wire andnarrow-pad-pitch semiconductor devices in Examples I-1 to I-5, which hadbeen encapsulated therein, were excellent in moldability with no wiresweep(minimum wire deformation) without generating voids.

[0190] The semiconductor devices in Comparative Examples I-6 to I-15,wherein the constitution of the semiconductor, with respect to thethickness of the encapsulating material, the length of the wire, the pincount, the pitch of pads, the thickness of the package, etc., wasoutside of the range defined in this invention, were excellent inmoldability with no wire sweep(minimum wire deformation) withoutgenerating voids, except for the molding inability due to gelation inComparative Example I-13 using encapsulation in the comparativeencapsulating epoxy resin molding material I-8 containing a primaryamino silane coupling agent in place of the silane coupling agentcontaining a secondary amino group.

EXAMPLES II-1 to II-10 COMPARATIVE EXAMPLES II-1 to II-30

[0191] (B-II) Preparation of Semiconductor Devices

[0192] Using the encapsulating epoxy resin molding materials I-1 toI-10, the semiconductor devices in Examples II-1 to II-10 andComparative Examples II-1 to II-30 were prepared. Encapsulation in theencapsulating epoxy resin molding material was carried out by molding ata mold temperature of 180° C., at a molding pressure of 6.9 MPa for acuring time of 90 seconds in a transfer molding machine, followed bypost-curing at 180° C. for 5 hours.

[0193] Preparation of OMPAC Type BGA

[0194] The semiconductor devices (OMPAC type BGA) having a packagethickness of 1.5 mm in Examples II-1 to II-5 were prepared in thefollowing manner.

[0195] An insulating base substrate (glass cloth-epoxy resin laminatedplate available under the trade name E-679, manufactured by HitachiChemical Co., Ltd.) was provided with a fine wiring pattern, then coatedwith an insulating protective resist (trade name: PSR4000AUS5,manufactured by TAIYO INK MFG. CO. LTD.) on the surface thereof, exceptfor metal-plated terminals at a semiconductor chip-mounting side andexternal connecting terminals at its opposite side, and dried at 120° C.for 2 hours. The resulting semiconductor chip-mounting substrate havingan external dimension of 26.2 mm×26.2 mm×0.6 mm thickness was coatedwith an adhesive (trade name: EN-X50, manufactured by Hitachi ChemicalCo., Ltd.), then mounted with a semiconductor chip having a chip size of9 mm×9 mm×0.51 mm thickness (area 81 mm²) and a pad pitch of 80 μm. Thesemiconductor chip-mounting substrate was then heated at a predeterminedrate of increasing temperature from room temperature to 180° C. in 1hour in a clean oven, further heated at 180° C. for 1 hour and subjectedto wire bonding with a metal wire of 30 μm in diameter and 5 mm inlength. Then the encapsulating epoxy resin molding materials I-1 to I-5were transfer-molded to a dimension of 26.2 mm×26.2 mm×0.9 mm thicknesson the semiconductor chip-mounted surface under the conditions describedabove.

[0196] Using the semiconductor epoxy resin molding materials I-6 toI-10, the semiconductor devices (OMPAC type BGA) having a packagethickness of 1.5 mm in Comparative Examples 1 to 5 were prepared in thesame manner as in Examples II-1 to II-5.

[0197] The semiconductor devices (OMPAC type BGA) having a packagethickness of 2.5 mm in Comparative Examples II-6 to II-15 were preparedby transfer-molding the encapsulating epoxy resin molding materials 1 to10 to a dimension of 26.2 mm×26.2 mm×1.9 mm thickness on thesemiconductor chip-mounted surface under the above-described conditionsin the same manner as in Examples II-1 to II-5, except that asemiconductor chip having a chip size of 4 mm×4 mm×0.51 mm thickness(area 16 mm²) and a pad pitch of 100 μm, and a metal wire of 30 μm indiameter and 1.5 mm in length, were used.

[0198] Preparation of Mold Array Package Type Stacked BGA

[0199] The semiconductor devices (mold array package type stacked BGA)having a package thickness of 0.95 mm in Examples II-6 to II-10 wereprepared in the following manner.

[0200] Two semiconductor chips having a chip size of 9.7 mm×6.0 mm×0.4mm thickness (area 58 mm²) and a pad pitch of 80 μm, having a die attachfilm (trade name: DF-400, manufactured by Hitachi Chemical Co., Ltd.)applied on the back thereof, were layered and arranged on a polyimidesubstrate of length 48 mm×width 171 mm×thickness 0.15 mm, as shown inFIG. 2. The semiconductor chip-mounting substrate was thencontact-bonded at a contact-bonding pressure of 200° C. under a loadingof 1.96 N for a contact-bonding time of 10 seconds; further baked at180° C. for 1 hour, and then subjected to wire-bonding with a metal wireof 30 μm in diameter and 5 mm in length, followed by transfer-moldingthe encapsulating epoxy resin molding materials I-1 to I-5 to adimension of length 40 mm×width 83 mm×thickness 0.8 mm on the surfacemounted with the semiconductor chips under the conditions describedabove.

[0201] Using the semiconductor epoxy resin molding materials I-6 toI-10, the semiconductor devices (mold array package type stacked BGA)having a package thickness of 0.95 mm in Comparative Examples II-16 toII-20 were prepared in the same manner as in Examples II-6 to II-10.

[0202] Further, the semiconductor devices (mold array package typestacked BGA) having a package thickness of 2.65 mm in ComparativeExamples II-21 to II-30 were prepared by transfer-molding theencapsulating epoxy resin molding materials I-1 to I-10 to a dimensionof length 40 mm×width 83 mm×thickness 2.5 mm on the surface mounted withsemiconductor chips under the above-described conditions in the samemanner as in Examples II-6 to II-10, except that semiconductor chipshaving a chip size of 5.1 mm×3.1 mm×0.4 mm thickness (area 16 mm²) and apad pitch of 100 μm, and a metal wire of 30 μm in diameter and 1.5 mm inlength, were used.

[0203] The prepared semiconductor devices in Examples II-1 to II-10 andComparative Examples II-1 to II-30 were evaluated for (1) wire sweep(indicator of wire sweep) and (2) the number of generated voids by thetest method 2 described above. The evaluation results are shown inTables 5 to 8. TABLE 5 Evaluation result 1 of the semiconductor devicesExamples II Comparative Examples II Characteristics 1 2 3 4 5 1 2 3 4 5Encapsulating epoxy resin molding 1 2 3 4 5  6  7 8  9 10 materials IWire sweep (%) 7 5 3 4 3 16 15 Not 14 20 Void generation 0/20 0/20 0/200/20 0/20 5/20 4/20 moldable 3/20 7/20

[0204] TABLE 6 Evaluation result 2 of the semiconductor devicesComparative Examples II Characteristics 6 7 8 9 10 11 12 13 14 15Encapsulating epoxy resin molding 1 2 3 4 5 6 7 8 9 10 materials I Wiresweep (%) 2 1 0 0 1 7 6 Not 4  8 Void generation 0/20 0/20 0/20 0/200/20 0/20 0/20 moldable 0/20 3/20

[0205] TABLE 7 Evaluation result 3 of the semiconductor devices ExamplesII Comparative Examples II Characteristics 6 7 8 9 10 16 17 18 19 20Encapsulating epoxy resin molding 1 2 3 4 5  6  7 8  9 10 materials IWire sweep (%) 8 7 6 6 6 18 17 Not 15 22 Void generation 0/20 0/20 0/200/20 0/20 8/20 6/20 moldable 5/20 9/20

[0206] TABLE 8 Evaluation result 4 of the semiconductor devicesComparative Examples II Characteristics 21 22 23 24 25 26 27 28 29 30Encapsulating epoxy resin molding 1 2 3 4 5 6 7 8 9 10 materials I Wiresweep (%) 3 3 2 2 2 9 7 Not 6  9 Void generation 0/20 0/20 0/20 0/200/20 0/20 0/20 moldable 0/20 2/20

[0207] The thin semiconductor devices in Comparative Examples II-1 toII-5 and Comparative Examples II-16 to II-20, which had beenencapsulated in the encapsulating epoxy resin molding materials I-6 toI-10 containing neither the silane coupling agent having a secondaryamino group (C) nor the phosphate (D), generated the molding defect ofeither wire sweep (high wire deformation) and void generation or amolding inability due to gelation.

[0208] On the other hand, the encapsulating epoxy resin moldingmaterials II-1 to II-5 containing the epoxy resin (A), the curing agent(B) and the silane coupling agent having a secondary amino group (C)were excellent in fluidity, and the thin semiconductor devices inExamples II-1 to II-10, which had been encapsulated therein, wereexcellent in moldability with no wire sweep(minimum wire deformation)without generating voids.

[0209] The semiconductor devices in Comparative Examples II-6 to II-15and Comparative Examples II-21 to II-30, wherein the thickness of thepackage was outside of the range defined in this invention, wereexcellent in moldability with no wire sweep(minimum wire deformation)without generating voids, except for the molding inability due togelation in Comparative Example II-13 and II-28 using encapsulation inthe comparative encapsulating epoxy resin molding material 8 containinga primary amino silane coupling agent in place of the silane couplingagent containing a secondary amino group.

EXAMPLES III-1 to III-9 COMPARATIVE EXAMPLES III-1 to III-4

[0210] (A-III) Preparation of Encapsulating Epoxy Resin MoldingMaterials

[0211] The respective components shown below were compounded in theamounts (parts by weight) shown in Table 13 and kneaded with rolls at akneading temperature of 80° C. for a kneading time of 10 minutes toprepare encapsulating epoxy resin molding materials III-1 to III-9(Examples III-1 to III-9) and molding materials III-10 to III-13(Comparative Examples III-1 to III-4).

[0212] (A) Epoxy Resin

[0213] (A-1) A biphenyl type epoxy resin having an epoxy equivalent of196, a melting point of 106° C. and a melt viscosity (ICI viscosity) at150° C. of 0.1×10⁻¹ Pas (trade name: Epicoat YX-4000H, manufactured byYuka Shell Epoxy Co., Ltd.)

[0214] (A-2) A bisphenol F type epoxy resin having an epoxy equivalentof 186, a melting point of 75° C. and a melt viscosity (ICI viscosity)at 150° C. of 0.1×10⁻¹ Pas (trade name: YSLV-80XY, manufactured byNippon Steel Chemical Co., Ltd.)

[0215] (A-3) A stilbene type epoxy resin having an epoxy equivalent of210, a melting point of 120° C. and a melt viscosity (ICI viscosity) at150° C. of 0.1×10⁻¹ Pas (tradename: ESLV-210, manufactured by SumitomoChemical Co., Ltd.)

[0216] (A-4) An o-cresol novolak type epoxy resin having an epoxyequivalent of 195, a softening point of 65° C. and a melt viscosity (ICIviscosity) at 150° C. of 2.0×10⁻¹ Pas (trade name: ESCN-190,manufactured by Sumitomo Chemical Co., Ltd.)

[0217] (A-5) An bisphenol A type brominated epoxy resin having an epoxyequivalent of 375, a softening point of 80° C., a melt viscosity (ICIviscosity) at 150° C. of 1.3×10⁻¹ Pas and a bromine content of 48% byweight (trade name: ESB-400T, manufactured by Sumitomo Chemical Co.,Ltd.)

[0218] (B) Curing Agent

[0219] (B-1) A phenol-aralkyl resin having a softening point of 70° C.,a hydroxyl equivalent of 175 and a melt viscosity (ICI viscosity) at150° C. of 2.0×10⁻¹ Pas (trade name: Milex XL-225, manufactured byMitsui Chemicals, Inc.)

[0220] (B-2) A biphenyl type phenol resin having a softening point of80° C., a hydroxyl equivalent of 199 and a melt viscosity (ICIviscosity) at 150° C. of 1.4×10⁻¹ Pas (trade name: MEH-7851,manufactured by Meiwa Plastic Industries, Ltd.)

[0221] (B-3) A phenol novolak resin having a softening point of 80° C.,a hydroxyl equivalent of 106 and a melt viscosity (ICI viscosity) at150° C. of 1.8×10⁻¹ Pas (trade name: H-1, manufactured by Meiwa KaseiCo., Ltd.)

[0222] (B-4) A melamine phenol resin having a softening point of 81° C.,a hydroxyl equivalent of 120 and a melt viscosity (ICI viscosity) at150°C. of 2.0×10⁻¹ Pas (trade name: Phenolite KA-7052-L2, manufactured byDainippon Ink and Chemicals, Incorporated)

[0223] (D) Phosphate

[0224] (D-1) Aromatic condensed phosphate (trade name: PX-200,manufactured by Daihachi Chemical Industry Co., LTD)

[0225] (D-2) Triphenyl phosphate

[0226] (E) Inorganic Filler

[0227] (E- 1) Spherical fused silica having an average particle diameterof 17.5 μm and a specific surface area of 3.8 m²/g

[0228] (F) Curing Accelerator

[0229] (F-1) Triphenyl phosphine

[0230] (G) Coupling Agent

[0231] (G-1) γ-Glycidoxypropyl trimethoxy silane (epoxy silane)

[0232] (H) Flame-Retardant

[0233] (H-1) Composite metal hydroxide (trade name: Echomug Z-10,manufactured by Tateho Chemical Industries Co., LTD)

[0234] (I) Other Additives

[0235] (I-1) Antimony trioxide

[0236] (I-2) Carnauba wax (manufactured by K.K. Serarika NODA)

[0237] (I-3) Carbon black (trade name: MA-100, manufactured byMitsubishi Chemical Corporation) TABLE 9 Molding Material No. III 1 2 34 5 6 7 8 9 10 11 12 13 Comparative Examples Compounding Examples IIIIII Components 1 2 3 4 5 6 7 8 9 1 2 3 4 (A-1) 100 100 100 100 100 — — —85 100 100 85 — (parts by weight) (A-2) — — — — — 100 — — — — — — —(parts by weight) (A-3) — — — — — — 100 — — — — — — (parts by weight)(A-4) — — — — — — — 100 — — — — 85 (parts by weight) (A-5) — — — — — — —— 15 — — 15 15 (parts by weight) (B-1) 89 80 89 89 — 94 83 — 83 89 89 83— (parts by weight) (B-2) — — — — 102 — — — — — — — — (parts by weight)(B-3) — — — — — — — 54 — — — — 50 (parts by weight) (B-4) — 6 — — — — —— — — — — — (parts by weight) (D-1) 25 25 — 10 25 25 25 40 10 — — — —(parts by weight) (D-2) — — 24 — — — — — — — — — — (parts by weight)(E-1) 1713 1690 1706 1570 1805 1749 1668 899 1582 1525 1425 1477 724(parts by weight) (F-1) 3.5 3.5 3.5 3.5 3.5 3.5 3.5 2 3.5 3.5 3.5 3.5 2(parts by weight) (G-1) 4.5 4.5 4.5 4.5 4.5 4.5 4.5 3 4.5 4.5 4.5 4.5 3(parts by weight) (H-1) — — — 30 — — — — — — 100 — — (parts by weight)(I-1) — — — — — — — — 6 — — — 6 (parts by weight) (I-2) 2 2 2 2 2 2 2 22 2 2 2 2 (parts by weight) (I-3) 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.53.5 3.5 3.5 3.5 (parts by weight) (E-1) 88 88 88 88 88 88 88 81 88 88 8888 81 Content (weight-%)

TEST EXAMPLE 3

[0238] The properties of the prepared encapsulating epoxy resin moldingmaterials III-1 to III-13 were determined in the following tests. Theresults are shown in Table 14.

[0239] (1) Spiral Flow

[0240] The encapsulating epoxy resin molding material was molded with aspiral flow-measuring mold according to EMMI-1-66 by a transfer moldingmachine at a mold temperature of 180° C., at a molding pressure of 6.9MPa for a curing time of 90 seconds, and then the distance of flow (cm)was determined.

[0241] (2) Disk Flow

[0242] Using a disk flow-measuring flat mold having an upper mold of 200mm (W)×200 mm (D)×25 mm (H) and a lower mold of 200 mm (W)×200 mm (D)×15mm (H), the weighed sample (encapsulating epoxy resin molding material)5g, was placed on the center of the lower mold heated at 180° C.; and 5seconds later, the upper mold heated at 180° C. was closed; and thesample was compression-molded under a loading of 78 N for a curing timeof 90 seconds; and the major axis (mm) and the minor axis (mm) of themolded product were measured with calipers, and their average value (mm)was determined as disk flow.

[0243] (3) Hardness Upon Heating

[0244] The encapsulating epoxy resin molding material was molded into adisk of 50 mm diameter×3 mm thickness under the above-describedconditions, and immediately after molding, the disk was measured with aShore D type hardness meter.

[0245] (4) Flame Retardancy

[0246] The encapsulating epoxy resin molding material was molded underthe above-described conditions with a mold for molding a test specimenhaving a thickness of {fraction (1/16)} inch, then cured at 180° C. for5 hours and evaluated for flame retardancy according to an UL-94 testmethod. TABLE 10 Molding Material No. III 1 2 3 4 5 6 7 8 9 10 11 12 13Examples III Comparative Examples III Characteristics 1 2 3 4 5 6 7 8 91 2 3 4 Spiral flow (cm) 117 110 120 102 119 123 115 113 105 93 87 89 85Disk flow (mm) 92 85 90 83 95 98 89 88 82 75 68 73 70 Hardness upon 7078 65 80 69 68 72 74 75 75 78 80 85 heating (Shore D) UL-94 test V-0 V-0V-0 V-0 V-0 V-0 V-0 V-0 V-0 V-1 V-0 V-0 V-0

EXAMPLES III-10 to III-27 COMPARATIVE EXAMPLES III-5 to III-12

[0247] (B-III) Preparation of Semiconductor Devices Preparation ofSemiconductor Devices (LQFP and QFP)

[0248] Using the encapsulating epoxy resin molding materials III-1 toIII-9 (Examples III-10 to III-27) or the molding materials III-10 toIII-13 (Comparative Examples III-5 to III-12), semiconductor deviceswere prepared in the following manner. Encapsulation in theencapsulating epoxy resin molding material was carried out by molding ata mold temperature of 180° C., at a molding pressure of 6.9 MPa for acuring time of 90 seconds in a transfer molding machine, followed bypost-curing at 180° C. for 5 hours.

[0249] Using the encapsulating epoxy resin molding materials III-1 toIII-9 (Examples III-10 to III-18) or the molding materials III-10 toIII-13 (Comparative Examples III-5 to III-8), semiconductor devices(100-pin LQFP) having an external size of 20 mm×20 mm and a totalthickness of 1.5 mm were prepared.

[0250] Said semiconductor devices were mounted with a test silicone chipof 10 mm×10 mm×0.4 mm (area 100 mm²) with a pad pitch of 80 μm,subjected to wire bonding with a wire of 18 μm in diameter and 3 mm inmaximum length and having the encapsulating material of 0.5 mm inthickness on the upper surface of the semiconductor chip and theencapsulating material of 0.5 mm in thickness on the back of thesemiconductor chip.

[0251] Using the encapsulating epoxy resin molding materials III-1 toIII-9 (Examples III-19 to III-27) or the molding materials III-10 toIII-13 (Comparative Examples III-9 to III-12), the semiconductor devices(64-pin QFP-1H) in Comparative Examples III-5 to III-17 having anexternal size of 20 m×x20 mm and a total thickness of 2.7 mm, mountedwith a test silicone chip of 4 mm×4 mm×0.4 mm (area 16 mm²) with a padpitch of 100 μm, subjected to wire bonding with a wire of 18 μm indiameter and 1.5 mm in maximum length and having the encapsulatingmaterial of 1.1 mm in thickness on the upper surface of thesemiconductor chip and the encapsulating material of 1.1 mm in thicknesson the back of the semiconductor chip, were prepared.

EXAMPLES III-28 to III-45 COMPARATIVE EXAMPLES III-13 to III-20

[0252] Preparation of Semiconductor Devices (OMPAC Type BGA)

[0253] Using the encapsulating epoxy resin molding materials III-1 toIII-9 (Examples III-28 to III-45) or the molding materials III-10 toIII-13 (Comparative Examples III-13 to III-20), semiconductor deviceswere prepared in the following manner. Encapsulation in theencapsulating epoxy resin molding material was carried out by molding ata mold temperature of 180° C., at a molding pressure of 6.9 MPa for acuring time of 90 seconds in a transfer molding machine, followed bypost-curing at 180° C. for 5 hours.

[0254] An insulating base substrate (glass cloth-epoxy resin laminatedplate available under the trade name E-679, manufactured by HitachiChemical Co., Ltd.) was provided with a fine wiring pattern, then coatedwith an insulating protective resist (trade name: PSR4000AUS5,manufactured by TAIYO INK MFG. CO. LTD.) on the surface thereof, exceptfor metal-plated terminals at a semiconductor chip-mounting side andexternal connecting terminals at its opposite side. The resultingsemiconductor element-mounting substrate having an external dimension oflength 26.2 mm×width 26.2 mm×thickness 0.6 mm was dried at 120° C. for 2hours, then coated with an adhesive (trade name: EN-X50, manufactured byHitachi Chemical Co., Ltd.), mounted with a semiconductor element havinga size of length 9 mm×width 9 mm×thickness 0.51 mm (area 81 mm²) and apad pitch of 80 μm. The semiconductor element-mounting substrate washeated at a predetermined rate of increasing temperature from roomtemperature to 180° C. in 1 hour in a clean oven, further heated at aconstant temperature of 180° C. for 1 hour. Thereafter, the wire bondingregion and the semiconductor element were wire-bonded with a metal wireof 30 μm in diameter and 5 mm in maximum length. Then, the encapsulatingepoxy resin molding materials 1 to 9 were transfer-molded to a dimensionof length 26.2 mm×width 26.2 mm×thickness 0.9 mm on the semiconductorelement-mounted surface (BGA device of 1.5 mm in thickness) under theconditions described above, whereby the BGA devices in Examples III-28to III-36 were prepared.

[0255] Using the molding materials III-10 to III-13 in place of themolding materials III-1 to III-9, the semiconductor devices inComparative Examples III-13 to III-16 were prepared in the same manneras in Examples III-28 to III-36.

[0256] Further, a substrate mounted with a semiconductor element oflength 4 mm×width 4 mm×thickness 0.51 mm (area 16 mm²) with a pad pitchof 100 μm, wherein the wire bonding region and the semiconductor elementwere wire-bonded with a metal wire of 30 μm in diameter and 1.5 mm inmaximum length, was prepared in the same manner as in Examples III-28 toIII-36. And then the encapsulating epoxy resin molding materials III-1to III-9 or III-10 to III-13 were transfer-molded to a dimension oflength 26.2 mm×width 26.2 mm×thickness 1.9 mm on the semiconductorelement-mounted surface (BGA device of 2.5 mm in thickness) under theabove-described conditions, whereby the BGA devices in Examples III-37to III-45 or Comparative Examples III-17 to III-20 were prepared.(Examples III-46 to III-63) (Comparative Examples III-21 to III-28)

[0257] Preparation of Semiconductor Devices (Mold Array Package TypeStacked BGA)

[0258] Using the encapsulating epoxy resin molding materials III-1 toIII-9 (Examples III-46 to III-63) or the molding materials III-10 toIII-13 (Comparative Examples III-21 to III-28), semiconductor deviceswere prepared in the following manner. Encapsulation in theencapsulating epoxy resin molding material was carried out by molding ata mold temperature of 180° C., at a molding pressure of 6.9 MPa for acuring time of 90 seconds in a transfer molding machine, followed bypost-curing at 180° C. for 5 hours.

[0259] As shown in FIG. 5, 56 laminated semiconductor elements, eachlaminate consisting of two semiconductor elements of 9.7 mm×6.0 mm×0.4mm (area 58 mm²) with a pad pitch of 80 μm and coated on the backthereof with a die bond film DF-400 manufactured by Hitachi Kagaku KogyoCo., Ltd., were arranged on a polyimide substrate of length 48 mm×width171 mm×thickness 0.15 mm, and then contact-bonded at a contact-bondingpressure of 200° C. under a loading of 200 gf for a contact-bonding timeof 10 seconds and further baked at 180° C. for 1 hour. Thereafter, thewire bonding region and the semiconductor element were wire-bonded witha metal wire of 30 μm in diameter and 5 mm in maximum length. Then, theencapsulating epoxy resin molding materials 1 to 9 were transfer-moldedto a dimension of length 40 mm×width 83 mm×thickness 0.8 mm on thesurface mounted with the semiconductor elements (BGA device of 0.95 mmin thickness) under the conditions described above as shown in FIG. 5,to prepare the BGA devices in Examples III-46 to III-54.

[0260] Using the molding materials III-10 to III-13 in place of themolding materials III-1 to III-9, the semiconductor devices inComparative Examples III-21 to III-24 were prepared in the same manneras in Examples III-46 to III-54.

[0261] Further, a substrate mounted with only one semiconductor elementof 5.1 mm×3.1 mm×0.4 mm 8area 16 mm²) with a pad pitch of 100 μm,wherein the wire bonding region and the semiconductor element werewire-bonded with a wire of 30 μm in diameter and 1.5 mm in maximumlength, was prepared in the same manner as in Examples III-46 to III-54,and the encapsulating epoxy resin molding materials III-1 to III-13 weretransfer-molded to a dimension of length 40 mm×width 83 mm×thickness 2.5mm on the surface mounted with the semiconductor element (BGA device of2.65 mm in thickness) under the conditions described above to preparethe BGA devices in Examples III-55 to III-63 or Comparative ExamplesIII-25 to III-28.

[0262] The prepared semiconductor devices in Examples III-10 to III-63and Comparative Examples III-5 to III-28 were evaluated for (1) wiresweep (indicator of wire sweep) and (2) the number of generated voids bythe test method 2 described above. The evaluation results are shown inTables 11 to 16. TABLE 11 Molding Material 1 2 3 4 5 6 7 8 9 10 11 12 13III No. Characteristics Examples III Comparative Examples III 10 11 1213 14 15 16 17 18 5 6 7 8 Wire sweep (%) 3 5 5 7 2 2 3 5 8 12 15 14 18Number of 0/20 0/20 0/20 0/20 0/20 0/20 0/20 0/20 0/20 2/20 4/20 4/205/20 generated voids

[0263] TABLE 12 Molding Material 1 2 3 4 5 6 7 8 9 10 11 12 13 III No.Characteristics Examples III Comparative Examples III 19 20 21 22 23 2425 26 27 9 10 11 12 Wire sweep (%) 0 0 0 0 0 0 0 0 0 3 5 4 7 Number of0/20 0/20 0/20 0/20 0/20 0/20 0/20 0/20 0/20 0/20 2/20 0/20 0/20generated voids

[0264] TABLE 13 Molding Material 1 2 3 4 5 6 7 8 9 10 11 12 13 III No.Characteristics Examples III Comparative Examples III 28 29 30 31 32 3334 35 36 13 14 15 16 Wire sweep (%) 5 7 7 8 3 3 4 6 8 16 20 18 22 Numberof 0/20 0/20 0/20 0/20 0/20 0/20 0/20 0/20 0/20 5/20 8/20 8/20 10/20generated voids

[0265] TABLE 14 Molding Material 1 2 3 4 5 6 7 8 9 10 11 12 13 III No.Characteristics Examples III Comparative Examples III 37 38 39 40 41 4243 44 45 17 18 19 20 Wire sweep (%) 2 3 3 3 0 1 2 3 3 7 8 7 9 Number of0/20 0/20 0/20 0/20 0/20 0/20 0/20 0/20 0/20 0/20 3/20 1/20 2/20generated voids

[0266] TABLE 15 Molding Material 1 2 3 4 5 6 7 8 9 10 11 12 13 III No.Characteristics Examples III Comparative Examples III 46 47 48 49 50 5152 53 54 21 22 23 24 Wire sweep (%) 7 8 8 9 6 6 7 7 9 18 24 22 25 Numberof 0/20 0/20 0/20 0/20 0/20 0/20 0/20 0/20 0/20 8/20 10/20 9/20 10/20generated voids

[0267] TABLE 16 Molding Material 1 2 3 4 5 6 7 8 9 10 11 12 13 III No.Characteristics Examples III Comparative Examples III 55 56 57 58 59 6061 62 63 25 26 27 28 Wire sweep (%) 3 3 3 3 2 2 2 3 3 9 10 9 11 Numberof 0/20 0/20 0/20 0/20 0/20 0/20 0/20 0/20 0/20 0/20 2/20 2/20 2/20generated voids

[0268] As can be seen from the results in Tables 11 to 16, thesemiconductor devices in Comparative Examples III-5 to III-28,encapsulated in the encapsulating epoxy resin molding materials III-10to III-13 containing neither the silane coupling agent having asecondary amino group (C) nor the phosphate (D), generate the moldingdefect of either wire sweep (high wire deformation) or generation ofvoids.

[0269] On the other hand, it is evident form the results in Tables 15 to20 that the encapsulating epoxy resin molding materials III-1 and III-9containing the epoxy resin (A), the curing agent (B), the inorganicfiller (E), the curing accelerator (F) and the phosphate (D), areexcellent in fluidity, and the semiconductor devices in Examples III-10to III-63, encapsulated therein, are excellent in moldability withoutgenerating voids with no wire sweep or with minimum wire deformation.

[0270] Those skilled in the art can understand that besides theembodiments described above, many modifications and alterations can bepracticed without departure from the sprit and scope of this invention.

[0271] Industrial Applicability

[0272] The encapsulating epoxy resin molding material for thinsemiconductor devices according to this invention is excellent influidity, and the semiconductor device encapsulated therein, which is asemiconductor device having a semiconductor chip arranged on a thin,multi-pin, long wire, narrow-pad-pitch, or on a mounted substrate suchas organic substrate or organic film, is free of molding defects such aswire sweep, voids etc. as shown in the Examples, and thus its industrialvalue is significant.

1. An encapsulating epoxy resin molding material comprising (A) an epoxyresin, (B) a curing agent, and (C) a silane coupling agent having asecondary amino group or (D) a phosphate, wherein a disk flow is 80 mmor more.
 2. An encapsulating epoxy resin molding material comprising (A)an epoxy resin, (B) a curing agent, and (C) a silane coupling agenthaving a secondary amino group or (D) a phosphate, wherein theencapsulating epoxy resin molding material is used for the semiconductordevice having at least one of the following constitutions (a) to (f):(a) at least one of an encapsulating material of an upper side of asemiconductor chip and an encapsulating material of a lower side of thesemiconductor chip has a thickness 0.7 mm or less; (b) the pin count is80 or more; (c) the length of the wire is 2 mm or more; (d) the padpitch on the semiconductor chip is 90 μm or less; (e) the thickness of apackage, in which the semiconductor chip is disposed on a mountingsubstrate, is 2 mm or less; (f) the area of the semiconductor chip is 25mm² or more.
 3. The encapsulating epoxy resin molding material describedin claim 2, wherein the disk flow is 80 mm or more.
 4. The encapsulatingepoxy resin molding material described in any one of claims 1 to 3,which further comprises (E) an inorganic filler.
 5. The encapsulatingepoxy resin molding material described in any one of claims 1 to 4,which further comprises (F) a curing accelerator.
 6. The encapsulatingepoxy resin molding material described in any one of claims 1 to 5,wherein the semiconductor device is a stacked type package.
 7. Theencapsulating epoxy resin molding material described in any one ofclaims 1 to 6, wherein the semiconductor device is a mold array package.8. The encapsulating epoxy resin molding material described in any oneof claims 1 to 7, wherein the melt viscosity of the epoxy resin (A) at150° C. is 2 poises or less.
 9. The encapsulating epoxy resin moldingmaterial described in any one of claims 1 to 8, wherein the epoxy resin(A) comprises at least one member of: a biphenyl type epoxy resinrepresented by the general formula (I):

wherein R¹ to R⁴ may be the same or different and are selected from ahydrogen atom and a C₁₋₁₀ substituted or unsubstituted monovalenthydrocarbon group, and n is an integer of 0 to 3, a bisphenol F typeepoxy resin represented by the general formula (II):

wherein R¹ to R⁸ may be the same or different and are selected from ahydrogen atom, a C₁₋₁₀ alkyl group, a C₁₋₁₀ alkoxy group, a C₆₋₁₀ arylgroup, and a C₆₋₁₀ aralkyl group, and n is an integer of 0 to 3, and astilbene type epoxy resin represented by the general formula (III):

wherein R¹ to R⁸ may be the same or different and are selected from ahydrogen atom, a C₁₋₁₀ alkyl group, a C₁₋₁₀ alkoxy group, a C₆₋₁₀ arylgroup and a C₆₋₁₀ aralkyl group, and n is an integer of 0 to
 3. 10. Theencapsulating epoxy resin molding material described in any one ofclaims 1 to 9, wherein the melt viscosity of the curing agent (B) at150° C. is 2 poises or less.
 11. The encapsulating epoxy resin moldingmaterial described in any one of claims 1 to 10, wherein the curingresin (B) comprises: a phenol-aralkyl resin represented by the generalformula (IV):

wherein R is selected from a hydrogen atom and a C₁₋₁₀ substituted orunsubstituted monovalent hydrocarbon group, and n is an integer of 0 to10, and/or a biphenyl type phenol resin represented by the generalformula (V):

wherein R¹ to R⁹ may be the same or different and are selected from ahydrogen atom, a C₁₋₁₀ alkyl group, a C₁₋₁₀ alkoxy group, a C₆₋₁₀ arylgroup and a C₆₋₁₀ aralkyl group, and n is an integer of 0 to
 10. 12. Theencapsulating epoxy resin molding material described in any one ofclaims 1 to 11, wherein the silane coupling agent having a secondaryamino group (C) comprises a compound represented by the general formula(VI):

wherein R¹ is selected from a hydrogen atom, a C₁₋₆ alkyl group and aC₁₋₂ alkoxy group, R² is selected from a C₁₋₆ alkyl group and a phenylgroup, R³ represents methyl or ethyl group, n is an integer of 1 to 6,and m is an integer of 1 to
 3. 13. The encapsulating epoxy resin moldingmaterial described in any one of claims 1 to 11, wherein the phosphate(D) comprises a compound represented by the general formula (X):

wherein eight R groups may be the same or different and represent a C₁₋₄alkyl group, and Ar represents an aromatic group.
 14. A semiconductordevice encapsulated in the encapsulating epoxy resin molding materialdescribed in any one of claims 1 to
 13. 15. The semiconductor devicedescribed in the claim 14, having at least one of the followingconstitutions (a) to (f): (a) at least one of an encapsulating materialof an upper side of a semiconductor chip and an encapsulating materialof a lower side of the semiconductor chip has a thickness 0.7 mm orless; (b) the pin count is 80 or more; (c) the length of the wire is 2mm or more; (d) the pad pitch on the semiconductor chip is 90 μm orless; (e) the thickness of a package, in which the semiconductor chip isdisposed on a mounting substrate, is 2 mm or less; (f) the area of thesemiconductor chip is 25 mm² or more.